GaN epitaxial growth on neodium gallate substrates

Abstract

We have investigated the feasibility of neodium gallate (NdGaO 3, NGO) as substrates for GaN epitaxial growth for the first time. GaN films deposited on neodium gallate substrates by the hydride vapor phase epitaxy technique have been found to be single-crystalline with the epitaxial relationship of GaN(0001)|NGO(011) and GaN[10 1 0]|NGO[100], where the lattice mismatch between the film and the substrate is less than 2%. Photoluminescence (PL) of GaN NGO films at room temperature showed a strong band edge emission with little emission in the longer wavelength region. The carrier concentration and the electronmobility of GaN NGO films were 7 × 10 19 cm −3 and 45 cm 2/Vs, respectively. These results are superior to those of GaN/sapphire films deposited simultaneously under the same conditions.