Abstract
In this paper, a new type of hybrid solar cell based on a heterojunction betweenpoly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and verticallyaligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays arefabricated by directly performing the nano-etching of GaAs wafer with spun-onSiO2 nanospheres as the etch mask through inductively coupled plasma reactive ion etching. ThePEDOT:PSS adheres to the surface of the GaAs NW arrays to form a p–n junction. Themorphology of GaAs NW arrays strongly influences the characteristics of theGaAs NW/PEDOT:PSS hybrid solar cells. The suppression of reflectance andthe interpenetrating heterojunction interface of GaAs NW arrays offers greatimprovements in efficiency relative to a conventional planar cell. Compared to the planarGaAs/PEDOT:PSS cells, the power conversion efficiency under AM 1.5 global one sunillumination is improved from 0.29% to 5.8%.
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