Abstract
We have demonstrated a new type of hybrid solar cell based on a heterojunction between poly(3,4- ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays. The GaAs NW arrays are directly fabricated by the nano-etching of GaAs wafer with spun-on SiO2 nanospheres as the etching mask through inductively coupled plasma reactive ion etching (ICP-RIE) system. Then we attach GaAs NW arrays onto PEDOT:PSS conductive polymer to form a p-n junction. According to our research, the morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The improved interpenetrating heterojunction interface and the suppressed reflectance of GaAs NW arrays will offer great improvements in efficiency relative to a conventional planar cell. The power conversion efficiency of 5.8 % of GaAs NW/PEDOT:PSS cells under AM 1.5 global one sun illumination can be achieved.
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