Abstract

We have demonstrated a new type of hybrid solar cell based on a heterojunction between poly(3,4- ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays. The GaAs NW arrays are directly fabricated by the nano-etching of GaAs wafer with spun-on SiO2 nanospheres as the etching mask through inductively coupled plasma reactive ion etching (ICP-RIE) system. Then we attach GaAs NW arrays onto PEDOT:PSS conductive polymer to form a p-n junction. According to our research, the morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The improved interpenetrating heterojunction interface and the suppressed reflectance of GaAs NW arrays will offer great improvements in efficiency relative to a conventional planar cell. The power conversion efficiency of 5.8 % of GaAs NW/PEDOT:PSS cells under AM 1.5 global one sun illumination can be achieved.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.