Theoretical exploration of photoemission characteristics of GaAs nanowire array cathode based on photon-enhanced thermionic emission

Abstract

The theoretical photoemission models of single GaAs nanowire and nanowire array cathode based on photon-enhanced thermionic emission (PETE) mechanism are respectively developed by utilizing two-dimensional continuity equations. Based on the built models in this work, the effect of several key factors on the quantum efficiency are also discussed. Results show that GaAs nanowire cathode exhibits the superiority of photoemission performance compared with GaAs film cathode at the spectral range of 300∼600 nm. Besides, the optimal wire diameter of GaAs nanowire cathode is in the range of 340∼360 nm. In addition, the nanowire cathode with low electron affinity of 0.3 eV achieves PETE effect under low temperature of 400 K, which is conducive to improve the stability of cathode. Moreover, increasing the incident light angle or decreasing the array spacing provides an effective method of obtaining high quantum efficiency of nanowire array cathode. Furthermore, the numerical difference between quantum efficiency and effective quantum efficiency implies that the low collection efficiency of emitted electrons is the main issue that hinders the application of PETE cathodes of GaAs nanowire array. The proposed GaAs nanowire array model would provide theoretical guidance for optimum design of PETE cathodes with nanoarray structure.