Future trends of HBT technology for commercial and defense applications

A.K Oki,D.C Streit,J Cowles,P Seymour,K.W Kobayashi,R.S Kagiwada,A Gutierrez-Aitken,T Block,D.K Umemoto,P.C Grossman,M.D Lammert,L.T Tran,Jerry Neal ,Steve Olson ,Satoshi Nojima ,E A Rezek ,Fumio Yamada ,Ling Yang ,Morten Hoppe ,W H Pratt ,Victor Steel

doi:10.1109/mtttwa.1997.595125

Future trends of HBT technology for commercial and defense applications

A.K Oki, D.C Streit + Show 19 more

https://doi.org/10.1109/mtttwa.1997.595125

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Publication Date: Feb 23, 1997

Citations: 3

Affiliation: Advanced Micro Devices (United States)

#Heterojunction Bipolar Transistor Technology #Heterojunction Bipolar Transistor + Show 8 more

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Abstract

Heterojunction bipolar transistor (HBT) technology has been under development since the early 1980s. In the mid-1990s HBT technology has matured providing components for high volume low cost commercial wireless applications, as well as for high performance defense avionics, ground, and space applications. We discuss the status and future trends of HBT IC technology and production for defense and commercial applications, including advanced technology development, and comparison to MESFET, HEMT, and silicon based bipolar technology. Brief mention is made of power amplifiers and signal synthesizers.

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