Abstract
TRW has the world's only production Molecular Beam Epitaxy (MBE) based GaAs Heterojunction Bipolar Transistor (HBT) technology, delivering over 3 million commercial chips per month, as well as space qualified HBT MMICs. Using this foundation, we have developed the next generation InP-based HBT technology to produce advanced HBT integrated circuits for space and defense applications as well as high volume commercial applications. Here we present performance characteristics for InP HBT ICs for consumer products and advanced space and defense applications.
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