Abstract
The performance and cost advantages of gallium arsenide (GaAs) based heterojunction bipolar transistor (HBT) and high electron mobility transistor (HEMT) technology has enabled several high volume commercial applications. TRW is currently delivering over 4 million MBE based GaAs HBT and HEMT integrated circuits per month for several commercial applications, as well as for high performance high reliability defense avionics, ground, and space applications. Indium phosphide (InP) based technologies have several enabling advantages over GaAs technologies for commercial communication applications, in particular for high efficiency mobile cellular, broadband millimeter wave point-to-point links, high speed fiber-optics, and satellite telecommunications.
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