Implementation of digital circuits in an InP scaled HBT technology

B.A Randall,M.M Lui,D.J Schwab,W.L Walters,E.L.H Amundsen,A.D Nielsen,B.K Gilbert,Y.K Brown,J.A Henige,M.M Sokolich

doi:10.1109/gaas.1999.803753

Implementation of digital circuits in an InP scaled HBT technology

B.A Randall, M.M Lui + Show 8 more

https://doi.org/10.1109/gaas.1999.803753

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Publication Date: Oct 17, 1999

Citations: 2

Affiliation: Mayo Clinic, HRL Laboratories (United States)

#Heterojunction Bipolar Transistor Technology #Heterojunction Bipolar Transistor + Show 8 more

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Abstract

The Mayo Foundation Special Purpose Processor Development Group (Mayo) and HRL Laboratories (HRL) are developing circuits for implementation in an indium phosphide (InP) scaled heterojunction bipolar transistor (HBT) technology which has the potential for very high performance analog and digital operation. Preliminary results from HRL show that the f/sub T/ of the devices can be improved from 90 GHz for the HRL InP standard (2 micron emitter) HBT technology to approximately 180 GHz for this scaled (1 micron emitter) HBT technology. Mayo has designed several digital circuits in this scaled technology, the initial test results for which are reported in this paper.

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