Abstract
We demonstrate the growth of full-composition-graded InxGa1−xN (0 ≤ x ≤ 1) on a GaN/sapphire template using plasma-assisted molecular beam epitaxy. Composition of indium in InxGa1−xN films is controlled by growth temperature and gallium flux. It was found that In composition increases gradually from x = 0 (GaN) to x = 1 (InN) along the growth direction accompanied by a gradual strain relaxation. At the initial stage of growth, multiple quantum wells like structures with low and high In composition InxGa1−xN layers are spontaneously formed, effectively relaxing the in-plane strain. Finally, the graded InxGa1−xN film exhibits a broadband absorption covering the full solar spectrum, which provides a promising path for the design and production of graded InxGa1−xN based photovoltaic devices.
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