Abstract
In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the <TEX>$SiO_x$</TEX> film with oxygen concentration(<TEX>$O_2/Ar+O_2$</TEX>) of 3.3% and the <TEX>$SiO_xN_y$</TEX> film with nitrogen concentration(<TEX>$N_2/Ar+O_2+N_2$</TEX>) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the <TEX>$SiO_x$</TEX> and/or <TEX>$SiO_xN_y$</TEX> films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over <TEX>$10^{-1}\;g/m^2{\cdot}day$</TEX> compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the <TEX>$SiO_xN_y$</TEX> film.
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