Abstract
Shallow donor concentration dependence of the free‐exciton recombination in epitaxial layers grown by the temperature‐difference method under controlled vapor pressure (TDM‐CVP) has been investigated. The intensity of the free‐exciton recombination linearly increases with shallow donor concentration as long as , which means that the recombination is enhanced by the presence of shallow impurities. The facet regions have a difference in the shallow donor concentration dependence, which can be attributed to lower deep level concentrations there than in the non‐facet regions.
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