Abstract

Double-gate carbon nanotube field effect transistors (DG-CNTFETs) are novel devices showing an interesting property that consists of controlling the p- or n-type behavior during the device operation. This opens up the opportunity for novel design paradigms. Based on a compact physical model of these devices, we demonstrate the superiority of field-programmable gate arrays (FPGAs) designed with fine-grain DG-CNTFETs compared to FPGAs designed with traditional circuits and with coarse-grain DG-CNTFETs by 13% to 48% respectively in terms of delay.

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