Reconfigurable circuits design based on DG-CNTFET transistors

Abstract

Controllable-polarity transistors have an interesting property, they can switch from p- to n-type behavior and vice-versa dynamically. This opens up the opportunity for building novel and complex functions in fine-grain reconfigurable logic inaccessible to MOSFETs. Double-gate carbon nanotube field effect transistors (DG-CNTFETs) is one of the major promising candidate for reconfigurable circuit reaching a good performance levels. In this paper we will demonstrate the benefit of designing a reconfigurable circuit based on a compact physical model of these transistor. First, an overview of different types of carbon nanotube field-effect, transistor (CNTFET) is given. DG-CNTFET model is described, and characterization of transistor is done. Finally a dynamically reconfigurable 8-function logic gate (CNT-DR8F) based on a (DG-CNTFET) is described, simulated and analyzed.