Abstract
The forward current-voltage characteristics of power gallium arsenide diodes were investigated at the current density range of j ∼ 10−10 3 A/cm 2. The ratio w/ L ( w is the width of the undoped N 0 base, L is the diffusion length) was varied in a wide range by irradiation of the p- n structures with γ-quants of 1.25 MeV energy. Experimental data were compared with theoretical calculations taking into account the reduction of p- n junction injection coefficients. It has been shown that experimental data fit well with the theory if saturation current density is ∼10 −18-10 −16 A/cm 2. There is no necessity to consider the reabsorption of the radiative recombination (RRR) effect to explain the experimental results. Simple analytical expressions for the current-voltage characteristics of GaAs diodes are proposed for a wide range of j, w and w/ L values.
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