Abstract
Results of detailed examination on Crowell-Sze's thermionic-diffusion theory on forward current-voltage characteristics of Schottky diodes and development of the theory using the procedure proposed by Stratton are presented. From the thermionic-diffusion theory, it is found that the change of the quasi Fermi level in the space charge region of the semiconductor is less than the thermal energy and, furthermore, effect of electrons' space charge on the current-voltage characteristics is small and negligible. Numerical integration of Boltzmann's equation indicates that paramer n of the forward characteristics deviates from unity, the more at the higher current density, and calculated electron temperature is higher than the lattice temperature. Current density and distribution of the electron temperature presented in this paper are different from those reported by Stratton. These are due to the differences in the boundary conditions at the metal-semiconductor contact.
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