Abstract
The use of a 2-step silicidation process to form ultra-thin layers of PtSi is shown. Continuous PtSi layers down to 3 nm thick are formed after sputter deposition of a thick Pt layer and subsequent RTP step followed by a selective etch and a second RTP step. A Pt/Pt 2Si/PtSi layered structure is formed after the first RTP step. PtSi/p-Si diodes formed using this method showed an ideality factor close to unity and the barrier height was found to be 0.234 eV.
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