Formation of the ErSi2 phase and the associated fractal pattern on the Si surface upon high current Er-ion implantation

Abstract

Using a metal vapor vacuum arc ion source, plain and continuous ErSi2 layers of good crystalline structure were formed on Si surfaces by high current Er-ion implantation. Interestingly, under some specific conditions, the formed ErSi2 grains organized themselves in a fractal pattern featuring self-similarity. The mechanism of the ErSi2 formation as well as the growth of the fractal pattern was discussed in terms of the dynamic launching of energetic Er ions into Si, beam heating effect, and the effect of ion fluence during the high current Er-ion implantation of far-from-equilibrium.