Abstract
Cerium-ion implantation was conducted to synthesize Ce-disilicide films on silicon wafers, using a metal vapor vacuum arc ion source. The continuous CeSi 2 films were directly obtained at relatively low temperature with neither external heating nor post-annealing and the surface morphology varied with the variation of the implantation parameters. The formation mechanism of the CeSi 2 phase is also discussed in terms of the temperature rise caused by ion beam heating and the ion dose in the far-from-equilibrium process of high current pulsed Ce-ion implantation.
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