Abstract
Using a metal vapor vacuum arc ion source, tantalum ion implantation was conducted to synthesize TaSi 2 phases on silicon wafers, and the continuous and stable TaSi 2 layers were directly obtained with neither external heating nor post-annealing. Interestingly, under some specific conditions, the formed TaSi 2 grains organized themselves in a fractal pattern featuring self-similarity. The mechanism of the TaSi 2 formation as well as the growth of the fractal pattern is discussed in terms of the temperature rise caused by the energetic Ta ions beam heating effect and the dose adjustment during high current pulsed Ta-ion implantation far from equilibrium.
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