Abstract
The coherent Stranski–Krastanov growth mode is used to create selfassembled InP islands on GaInP/GaAs(311)A surfaces. The resulting islands on (311)A surfaces have a base width distribution peaked in the range of 600–800 Å in contrast to a distribution peaked at 1200 Å for islands on (100) surfaces. In addition on the (311)A surfaces, there is a bimodal island height distribution peaked at 15 and 50 Å. For the (311)A surfaces, the islands are significantly smaller and more dense (∼1010 islands/cm2) than the islands formed on (100) surfaces (∼109 islands/cm2). Despite these differences in the islands formed on the two surfaces, the growth occurs similarly for the two surfaces, with the formation of three different types of islands distinguished primarily by height.
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