Abstract
GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near-surface quantum well using self-organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free-standing GaInAs/GaAs columns, produced by a three-step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.
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