Abstract
Utilizing the Stranski-Krastanov growth mode, three-dimensional InP islands are formed on a GalnP/GaAs surface using metalorganic chemical vapor deposition. The islands have been investigated with atomic force microscopy, and the effect of the deposition rate on the shape of the islands has been quantified. The height of the islands varies with deposition rate, whereas the basediameters are nearly constant around 1260 ± 35A. The island height is 290 ± 12 A at a high (2.6 ML/s) deposition rate and decreases to approximately 250 ± 16 A for low (0.1 ML/ s) and moderate (0.8 ML/s) deposition rates.
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