Abstract
Ion beam irradiation has been examined as a method for creating nanoscale semiconductorpillar and cone structures, but has the drawback of inaccurate nanostructureplacement. We report on a method for creating and templating nanoscale InAs spikesby focused ion beam (FIB) irradiation of both homoepitaxial InAs films andheteroepitaxial InAs on InP substrates. These ‘nanospikes’ are created as In droplets,formed due to FIB irradiation, act as etch masks for the underlying InAs. Bypre-patterning the InAs to influence In droplet movement, nanospike locations onhomoepitaxial InAs may be controlled with limited accuracy. Creating nanospikesusing an InAs/InP heterostructure provides an additional measure of controlover where the spikes form because nanospikes will not form on exposed regionsof InP. This effect may be exploited to accurately control nanospike placementby pre-patterning an InAs/InP heterostructure to control the location of theInAs/InP interface. Using this heterostructure templating method it is possible toaccurately place nanospikes into regular arrays that may be useful for a variety ofapplications.
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