Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

Abstract

In n-channel nanoscale tri-gate fin-shaped field-effect transistors with high-k gate dielectric stack, the 1/f noise is investigated, ascribed to the carrier number fluctuations with correlated mobility fluctuations. The overall results show that the gate dielectric trap density is uniform in both top-gate and side-gates and the product Ω=αscμeffCox of the Coulomb scattering coefficient αsc, the effective carrier mobility μeff and the gate oxide capacitance per unit area Cox increase with decreasing the fin thickness due to enhancement of side-gates interface roughness effects.