The Effect of Electron Incident Angle on Transmittance and Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor with High-K Dielectric Gate Stack

Abstract

Electron transmittance and tunneling current through high‐k dielectric gate stacks of metal‐oxide‐semiconductor (MOS) capacitors have been calculated by including an anisotropic mass and a transverse‐longitudinal kinetic energy coupling which is represented by a gate electron phase velocity. TiN/HfSiOxN/SiO2/p‐Si(100) structures with applying a negative bias voltage to the TiN metal gate is used to discuss the transmittance and tunneling current. In this work, the effects of the incident angle of electron and the valley in the anisotropic Si(100) to the transmittance and tunneling current are considered. It is found that the transmittance decreases as the electron gate phase velocity increases. It is also found that the transmittance and tunneling current get the highest at the incident angle of 0°. In addition, the transmittance is insignificantly affected by the valleys in the anisotropic Si(100) substrate.