Abstract
Electron transmittance and tunneling current through high-k dielectric gate stacks of metal-oxide-semiconductor (MOS) capacitors have been calculated by including transverse-longitudinal kinetic energy coupling, which is represented by a gate electron phase velocity, and anisotropic masses. Metal gate/HfSiOxN/SiO2/p-Si(100) structures with applying a negative bias voltage to the gate is used to discuss the transmittance and tunneling current. In this work, the effect of the work function to the transmittance and tunneling current are considered. It is shown that the transmittance decreases as the work function increases. It is also found that the tunneling current is influenced by the metal work function.
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