Abstract
Three flash memory cell structures with silicon nanowire channels and high-k dielectric stacks were fabricated with a “self-aligning” process and their characteristics are reported and compared in this paper: a Metal/SiO 2/HfO 2/SiO 2/Si (MOHOS) cell with a SiO 2 blocking layer and two Metal/Al 2O 3/HfO 2/SiO 2/Si (MAHOS) cells with Al 2O 3, all with HfO 2 as the charge trapping layer. Compared to (control) planar cells, all three operate at higher speeds, attributed to the enhanced electric field across the tunneling oxide surrounding the channel. The MAHOS cells (Al 2O 3 blocking layer) outperform the MOHOS cells (SiO 2 blocking layer) and both have large memory window, fast operation speed, good endurance and retention.
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