Flicker Noise Analysis of Non-uniform Body TFET with Dual Material Source (NUTFET-DMS)

Abstract

Noise analysis is an important parameter to study the insight of device parameters. At low frequency, mainly flicker noise prevails and effects different performance parameters of a device. This work presents the flicker noise analysis of non-uniform body TFET with dual material source (NUTFET-DMS). The effect of the absence and presence of donor type of interface trap charges at both front and back silicon and gate oxide interface (Si-HfO2 and Si-SiO2) has been incorporated. Further, the analysis also includes the effect of temperature variation (200, 300 and 400 K) in different noise defining parameters such as drain current noise power spectral densities (Sid) and gate voltage noise power spectral densities (Svg). It has been perceived that the occurance of interface trap charges has a unfavorable behavior on both noise power spectral densities (Sid and Svg) mainly at low temperatures. However, when temperature increases, the effect of trap charges becomes negligible, but noise behavior degrades severely.