Abstract
Noise analysis is an important parameter to study the insight of device parameters. At low frequency, mainly flicker noise prevails and effects different performance parameters of a device. This work presents the flicker noise analysis of non-uniform body TFET with dual material source (NUTFET-DMS). The effect of the absence and presence of donor type of interface trap charges at both front and back silicon and gate oxide interface (Si-HfO2 and Si-SiO2) has been incorporated. Further, the analysis also includes the effect of temperature variation (200, 300 and 400 K) in different noise defining parameters such as drain current noise power spectral densities (Sid) and gate voltage noise power spectral densities (Svg). It has been perceived that the occurance of interface trap charges has a unfavorable behavior on both noise power spectral densities (Sid and Svg) mainly at low temperatures. However, when temperature increases, the effect of trap charges becomes negligible, but noise behavior degrades severely.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.