Noise behavior and reliability analysis of non-uniform body tunnel FET with dual material source

Abstract

In this paper the noise analysis of Non-Uniform Body TFET with Dual Material Source is performed incepting both the absence and presence of different types of trap charges when the device undergoes various changes in source material (like Si, Ge, and both Si + Ge), and temperature (200 K–400 K) etc. In this study it has been found that the value of drain current noise power spectral density (Sid) for the device is 9.92 × 10−23 A2/Hz and for entire source region having Si and Ge materials the Sid values are estimated as 3.3 × 10−24 A2/Hz and 1.7 × 10−19 A2/Hz, respectively. In the device noise degradation effect is admissible when different performance parameters are accounted as compared to the cases when source material is completely made of Si or Ge. The aforesaid fact has been validated by normalized Sid (Sid/Ids2) vs. Drain current (Id) and Sid (Sid/Ids2) vs. Subthreshold Swing (SS) plot analysis, which clearly indicates the less effect of noise and superior electrostatic coupling in the device. Furthermore, the systematic study for effect of different types of noise under various trap charge distributions is also reported which showed that the device is negligibly effected by donor trap charges. Lastly to explore the reliability part of the device the temperature analysis including the absence and presence of trap charges for the noise behavior illustrated that the effect of increase in noise due to presence of trap charges is more at low temperatures and low gate to source voltages (Vgs) and the dominating noise component is found to be G-R noise.