Impact of temperature and different types of trap charges on noise behavior of Non-uniform Body with Dual Material Source TFET (NUTFET-DMS)

Abstract

This paper presents the noise analysis of non-uniform body with dual material source TFET (NUTFET-DMS) in absence and presence of various types and distribution of trap charges. Different noise performance describing parameters such as drain current noise power spectral density (Sid) and gate voltage noise power spectral density (Svg) are investigated incorporating diffusion, generation-recombination (G-R) and flicker noise components. It is observed that at room temperature the device has a peak value of Sid and Svg of 2.88×10-21 A2/Hz and 6.67×10-4 V2/Hz, 3.95×10-21 A2/Hz and 9.1×10-4 V2/Hz, and 2.57×10-21 and 5.93×10-4 when there are no trap charges, donor and acceptor types of trap charges respectively. It can be portrayed that at low temperature range the device is more sensitive to Gaussian distribution of donor types of trap charges when compared to acceptor types of trap charges at high gate to source voltage (Vgs) however, the reverse is true for low Vgs. Finally, it is observed that the noise of the considered device is negligibly affected due to uniform distribution different types of trap charges at high temperatures.