Abstract

This article reports about the behavior of noise for single gate extended source tunnel fet (SG-ESTFET) including the presence of various interface trap charges. Various noise sources such as generation recombination (G-R) noise, flicker noise, and diffusion noise are pinned in this analysis of noise. The noise defining parameters such as noise power spectral density (PSD) (Sid) of drain current and electron noise power spectral density (PSD) (Svgee) of gate voltage are investigated at different frequencies. It is observed that at higher and lower frequencies, the diffusion noise, and G-R noise become the dominant source of the device noise respectively.

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