First Demonstration of Watt-Level C-Band MMIC Rectifier With GaN Schottky Diode

Abstract

In this letter, a watt-level C-band monolithic microwave integrated circuits (MMICs) rectifier with lateral gallium nitride (GaN) Schottky barrier diode (SBD) is demonstrated for the first time. The proposed MMIC is fabricated on SiC-based AlGaN/GaN heterojunction material with a circuit dimension of only 2.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 2.1 mm. Benefited from the high-performance GaN device and the well-designed circuit, high conversion efficiency of 51.4% is achieved at an input power of 30.3 dBm, a frequency of 5.5 GHz, and a load resistance of 120 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $</tex-math> </inline-formula> , significantly outperforming previously reported MMIC rectifier and showing its great potential for high-power and high-efficiency microwave power transmission (MPT).