Abstract
SrBi2.4Ta2O9 (SBT) thin films of 70-400 nm thickness were prepared using liquid source misted chemical deposition (LSMCD), and their ferroelectric properties were characterized. When annealed at 800°C for 1 hour in oxygen ambient, the LSMCD-derived SBT film of 70 nm thickness exhibited the 2Pr of 15.9 μC/cm2 and Ec of 69 kV/cm at ±5V. The LSMCD-derived SBT films exhibited the size effects, i.e., a decrease of the remanent polarization and the relative permittivity and an increase of the coercive field with a reduction of the film thickness. The LSMCD-derived SBT films with the thickness of 70-400 nm exhibited the fatigue-free behavior up to 1012 switching cycles. The ferroelectric characteristics of the LSMCD-derived SBT films annealed at 600-800°C were improved by using 50 nm-thick SBT as a seed layer.
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