Abstract
SrBi 2.4Ta 2O 9 (SBT) thin films of 70–400 nm thickness were prepared on platinized Si substrates by liquid-source misted chemical deposition (LSMCD), and the thickness dependence of the ferroelectric characteristics was investigated. The grain size of the LSMCD-derived SBT films was approximately 150 nm and hardly varied with the film thickness. The 70-nm thick SBT film exhibited remanent polarization (2 P r) of 13.5 μC/cm 2 and a coercive field value (E c) of 63 kV/cm at ±3 V. Within the thickness range of 70–400 nm, the LSMCD-derived SBT films exhibited size effects, i.e. a decrease in remanent polarization and relative permittivity and an increase in the coercive field with a reduction in the film thickness. The LSMCD-derived SBT films with a thickness of 70–400 nm exhibited fatigue-free behavior for up to 10 12 switching cycles.
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