Abstract
The substitution effect of W+6 at Ta+5 site on the structural, dielectric and ferroelectric properties of Bi-rich Sr0.8Bi2.3Ta2O9 (SBT) thin films is reported. Samples of compositions Sr0.8-x/2Bi2.3Ta2-xWxO9 (SBTW) with x ranging from 0.0 to 0.2 were synthesized by a chemical solution deposition technique using non-hydrolyzing precursors. The microstructure and ferroelectricity of SBTW films as functions of dopant concentration and annealing temperature were studied. Well-defined hysteresis loops were obtained for the doped films annealed between 650°C and 750°C. The ferroelectric properties, however, were not improved compared to those of undoped SBT films due to the appearance of a non-ferroelectric secondary phase.
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