Abstract
ABSTRACT(Bi,La)4Ti3O12 (BLT) thin films with various Bi2O3 template layers were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Both of the BLT films with a thin Bi2O3 template layer and those without a Bi2O3 layer had a highly c-axis oriented growth, while both of the BLT films with a thin Bi2O3 bottom layer and those with a Bi2O3 intermediate layer were highly c-axis oriented. It was found that the use of Bi2O3 template layers improved significantly the ferroelectric properties of BLT thin films. In addition, the thin films with a thin Bi2O3 template layer showed good dielectric properties. All the capacitors with Bi2O3 template layers showed high polarization fatigue resistance and good retention properties.
Published Version
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