Features of the formation of thermal donors in silicon under elastic tensile stress

Abstract

The formation process of electrically active oxygen-containing complexes (thermal donors) in silicon is investigated at the initial stage of thermal treatment at T < 500°C under elastic tensile stress σ = 1 GPa. It is shown that, under these conditions, the formation of singly charged donor centers is observed in silicon when the oxygen concentration is (3–5) × 1017 cm−3. When the oxygen concentration is 9 × 1017 cm−3, doubly charged donor centers form. The depth profile of thermal donors is found in the samples studied.