Electrical properties of thermal donors formed in silicon under elastic tensile stress

Abstract

The electrical properties of thermal donors formed in the bulk and near-surface regions in silicon samples with (3–9) × 1017 cm−3 oxygen concentrations under elastic tensile stress σ of about 1 GPa have been studied. The original method allowing us to control an introduced elastic tensile stress during the thermal donor’s formation at T = 450°C by a double-crystal X-ray diffractometer has been used. The formation of thermal donors in silicon with a high oxygen concentration of 9.3 × 1017 cm−3 under tensile stress has been found to be less effective than in silicon with a low oxygen concentration of (3–5) × 1017 cm−3. Single-charged donors are formed in silicon with a low oxygen concentration under tensile stress while double-charged donors are formed in silicon with a high oxygen concentration.