Abstract
It has been shown that bistability of thermal double donors (TDD) in silicon can be observed by EPR technique. The spectrum of a bistable TDD species (TDD2) has been isolated using heat-treatment of Czochralsky-grown n-type silicon crystals with initial resistivity 4.5Ωcm, at temperature 400°C and subsequent irradiation with electrons (E=3.5MeV). The principal values of the TDD2 g-tensor are determined as g1=1.9928, g2=2.0009, g3=1.9999. An interpretation of some EPR data is given in the framework of the two-center model of the TDD structure.
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