Abstract
We prepared Mg-doped Sb4Te films and investigated their structural, electrical and optical properties. It was found that Mg could increase the crystallization temperature and improve the activation energy of crystallization as well as amorphous state stability of the Sb4Te film. Compared with Ge2Sb2Te5, the optimal composition of Mg19.8(Sb4Te)80.2 exhibits a higher crystallization temperature (∼187 °C), and better data retention ability (keeping the amorphous state at 113.6 °C for ten years). Moreover, fast full crystallization (∼20 ns at a laser power of ∼60 mW) in the Mg19.8(Sb4Te)80.2 film is confirmed, which is essential to achieve rapid data recording in phase change memory.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
