Abstract
A truly monopolar GaAs Fabry–Perot cavity Gunn laser is demonstrated. The device is grown by metalorganic chemical vapor deposition on a semi-insulating GaAs substrate and consists of an n=4.6×1017cm−3 doped GaAs active layer sandwiched between the AlxGa1−xAs(x=0.32) waveguiding layers. The operation of the device is based on the band to band recombination of impact-ionized nonequilibrium electron-hole pairs in the propagating high field domains in the Gunn diode, which is placed in a Fabry–Perot cavity, and biased above the threshold of negative differential resistance. Lasing from the device is observed at temperature T⩾95K. The maximum power emitted from the device is P=25.4μW at λ=840nm and T=95K.
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