High-Performance In0.23Ga0.77 As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD

Abstract

We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with high on-current to off-current (Ion/Ioff) ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition (MOCVD). The 2 μm channel-length devices exhibit a peak extrinsic transconductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm2/Vs extracted by the split C-V method. Furthermore, the Ion/Ioff ratio is significantly improved from approximately 4.5 × 103 up to approximately 4.32 × 104 by controlling the etch thickness of In0.49 Ga0.51 P. The high drain current and high Ion/Ioff ratio of the In0.23 Ga0.77 As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.