Abstract
ABSTRACTAlxGal-xAs alloy was obtained on semi-insulating GaAs by laser beam interaction. For this purpose, thin layers (~150 A) of AlAs and GaAs were deposited by MICVD on the semi-insulating undoped GaAs substrate and irradiated with a high power laser beam. For a certain critical value of incident power (7.1 watts/mm2), a layer of AlxGal-xAs alloy was formed. The nature of the alloy was examined by Auger and Far infrared reflectance spectroscopy. The later technique reveals the characteristic mode of AlxGal-xAs confirming its formation. Disorder induced LA mode was also observed.
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