Abstract
Process-induced damage in semi-insulating GaAs(100) substrates as a function of isochronal He and Ar ion plasma etching conditions (DC bias 0–600 V, pressure 10–30 mTorr) has been studied using photoreflectance (PR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Variations in the PR spectra of the GaAs samples as a function of dry etching parameters are correlated with ellipsometry analysis. The influence on PR spectra of backscattered surface contamination introduced during etching is demonstrated and quantified using SIMS.
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