Fabrication of SAG‐AlGaN/InGaN/AlGaN LEDs by mixed‐source HVPE with multi‐sliding boat system

Abstract

The selective area growth (SAG) of AlGaN/InGaN/AlGaN light-emitting diodes (LEDs) is performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to obtain the SAG-AlGaN/InGaN/AlGaN heterostructure, a special graphite fixture to use in HVPE is designed. First, an n-type AlGaN layer is grown at 1090 °C on a GaN templated (0001) sapphire substrate with a patterned SAG-structure of a silicon oxide (SiO2). On this selectively grown n-type AlGaN layer, a nominally undoped-InGaN layer is grown using an In-Ga mixed metallic source at 990 °C. After the growth of InGaN layer, Mg-doped AlGaN and Mg-doped GaN layers are grown as a cladding and capping layers at 1090 °C and 1050 °C, respectively. All of the epitaxial layers of LED structure are grown consecutively with a multi-sliding boat system. Room-temperature electroluminescence (EL) characteristics show an emission peak wavelength of 415 nm with a full width at half-maximum (FWHM) of approximately 0.37 eV. We find that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitride LEDs. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)