Characterization of a SAG‐InGaN/AlGaN LED by mixed‐source HVPE with a multi‐sliding boat system

Abstract

Abstract— The selective area growth (SAG) of a InGaN/AlGaN light‐emitting diode (LED) is performed by using mixed‐source hydride vapor‐phase epitaxy (HVPE) with a multi‐sliding boat system. The SAG‐InGaN/AlGaN LED consists of a Si‐doped AlGaN cladding layer, an InGaN active layer, a Mg‐doped AlGaN cladding layer, and a Mg‐doped GaN capping layer. The carrier concentration of the n‐type AlxGa1−xN (x ∼ 16%) cladding layer depends on the amount of poly‐Si placed in the Al‐Ga source. The carrier concentration is varied from 2.0 × 1016 to 1.1 × 1017 cm−3. Electroluminescence (EL) characteristics show an emission peak wavelength at 426 nm with a full width at half‐maximum (FWHM) of approximately 0.47 eV at 20 mA. It was found that the mixed‐source HVPE method with a multi‐sliding boat system is a candidate growth method for III‐nitride LEDs.