Abstract
The selective area growth (SAG) of AlGaN/InGaN/AlGaN light-emitting diodes (LEDs) is performed by mixed-source hydride vapor phase epitaxy (HVPE). The structure is grown on a n-GaN templated (0001) sapphire substrate. The SAG-double heterostructure (DH) is consisted of a Te-doped AlGaN cladding layer, an InGaN active layer, a Mg-doped AlGaN cladding layer, and a Mg-doped GaN capping layer. All of the epitaxial layers of LED structure are grown consecutively with a multi-sliding boat system. Room-temperature electroluminescence (EL) characteristics show an emission peak wavelength of 400 nm with a full width at half-maximum (FWHM) of approximately 0.38 eV (at 20 mA). We find that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitride LEDs. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
