Abstract
In this paper, the selective area growth (SAG) of SAG-UV light-emitting diode (LED) was performed by mixed-source hydride vapor phase epitaxy (HVPE) with a multi-sliding boat system. The SAG-UV LED consists of a Si-doped GaN layer, an Si-doped AlGaN cladding layer, an AlGaN active layer, an Zn-doped AlGaN cladding layer, and a Zn-doped GaN capping layer. All of the epitaxial layers of LED structure were grown consecutively with a multi-sliding boat system. Room-temperature electroluminescence (EL) characteristics show an emission peak wavelength of 330 nm at room temperature. The aging test result of SAG-UV LED shows that the current was changed from 27.7 to 31.2 mA during 170 h at room temperature. At the current–voltage (I–V) measurement, the turn-on voltage of the SAG-UV LED is 3.5 V at room temperature. The value of the series resistance is about 200 Ω. We find that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of ultra-violet LEDs with high quality epi-layer.
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