Growth of HVPE-GaN/InGaN Heterostructure on r-Plane Sapphire Substrate

Abstract

GaN/InGaN heterostructure on r-plane Al2O3 substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The InGaN/GaN heterostructure is grown by a selective-area growth (SAG) method. The heterostructure consists of an undoped GaN layer, an InGaN layer, and a Mg-GaN layer. NH3 and gallium (or indium) chloride formed with HCl, which is owed over for a mixed source, are used as gallium (or indium) and nitrogen sources. The gas ow rates of HCl and NH3 are maintained at 10 sccm and 500 sccm, respectively. The temperature of the GaN source zone is 650 C. In the case of the InGaN, the temperature of the source zone is 900 C. The growth temperatures of the GaN and InGaN layers are 820 C and 850 C, respectively. The electroluminescence (EL) peak of the GaN/InGaN heterostructure is 468 nm and the full width at half maximum (FWHM) is 89.7 nm. These results demonstrate that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE.