Abstract
Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridge-type triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [111]A and [01̄1] directions. Fabrication of quantum dots on ridge-type triangles and hexagons with smaller sizes and quantum wires on stripes running in the [1̄1̄2]A direction was proposed.
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